Targeted Depositions
NREL has several non-combinatorial physical vapor deposition chambers for targeted follow-up studies of the most promising materials identified by combinatorial synthesis.
Molecular Beam Epitaxy
Molecular beam chamber: No. 1
Materials: Oxides, Nitrides
Substrates: <4" diameter, <1200C
Sources: 8 effusion cells
Gases: O and N RF plasma
Base pressure: 10-11-10-10 Torr
Features: Load lock, preparation chamber, reflection high-energy electron diffraction, oxygen-resistant substrate heater, and laser reflectometry
Publications:
Growth and Characterization of Homoepitaxial ß-Ga2O3 Layers, J. Phys. D: Appl. Phys. 5 (2020)
Heteroepitaxial Integration of ZnGeN2 on GaN Buffers Using Molecular Beam Epitaxy
Cryst. Growth Des. (2020)
Pulsed Laser Deposition
Pulsed laser deposition chamber: No. 1
Materials: Oxides and other materials
Substrates: <3" diameter, <800C
Targets: 1” circular
Gases: Ar, O, N, N2/H2
Base pressure: 10-9-10-8 Torr
Features: Targeted material deposition
Publications:
Li-Doped Cr2MnO4: A New p-Type Transparent Conducting Oxide by Computational Materials Design, Adv. Funct. Mat. (2013)
Control of the Electrical Properties in Spinel Oxides by Manipulating the Cation Disorder, Adv. Func. Mat. (2014)
Pulsed laser deposition chamber: No. 2
Materials: Oxides
Substrates: <3" diameter, <800C
Targets: 1” circular
Gases: Ar, O, N, N2/H2
Base pressure: 10-9-10-8 Torr
Features: Targeted material deposition and load lock
Publications:
Enhanced Electron Mobility Due to Dopant-Defect Pairing in Conductive ZnMgO, Adv. Func. Mat. (2014)
Surface Origin of High Conductivities in Undoped In2O3 Thin Films, Phys. Rev. Lett. (2012)
Additional Publications
Growth and Characterization of Homoepitaxial ß-Ga2O3 Layers, J. Phys. D: Appl. Phys. (2020)
Epitaxial Growth of Rock Salt MgZrN2 Semiconductors on MgO and GaN, Applied Physics Letters (2020)
Heteroepitaxial Integration of ZnGeN2 on GaN Buffers Using Molecular Beam Epitaxy, Crystal Growth and Design (2020)
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