Dual-Beam Sample Preparation
The dual-beam focused-ion-beam (FIB) workstation consists of a FIB column and a scanning electron microscope (SEM) column on the same platform. Uses include ion milling, metal deposition, ion imaging, and electron imaging on the micrometer and nanometer scale of advanced photovoltaic materials and devices.
The dual-beam FIB supports other analytical tools such as Transmission Electron Microscopy (TEM), and precise, site-specific sample preparation (example) for TEM, SEM, and local electrode atom probe (LEAP) (example).
Acquiring chemical spectra and elemental maps is another feature of this system with energy-dispersive spectroscopy (EDS) (example). Three-dimensional chemical reconstructions can be obtained by combining controlled ion milling with chemical mapping. The FIB is equipped with a gas injection system (GIS) platinum metal deposition capability that can be used with either ion-beam-assisted or electron-beam-assisted chemical vapor deposition (example). Using a digital patterning generator also allows for complete FIB milling or deposition of complex structures with software-supplied parameters or by direct input of bitmap files (or both).
Examples of Dual-Beam Focused-Ion-Beam Sample Fabrication Capabilities
FIB: TEM sample preparation — FIB prepared TEM cross-section (from A to C) Opposing trenches are milled out with the Ga+ ion source and a 1-2 µm thin section is left free standing in the wafer. A side view shows the depth of the trenches. The section is then welded to the micro-manipulator, extracted from the wafer then transferred and welded to a TEM grid post. Final thinning down to a thickness of < 100nm is achieved using low incident angles and low Ga ion current.
For further information, contact Mowafak Al-Jassim, 303-384-6602.