As a postdoctoral researcher at NREL, Karen Heinselman studies synthesis and characterization of novel nitride thin films, device fabrication for high-temperature applications, and Rutherford backscattering spectroscopy to determine composition of various films. She came to NREL at the end of 2017 as a post-doctoral researcher. She earned her doctorate degree in materials science and engineering at Cornell University, studying under James Richard Shealy. Her doctoral work focused on using low-pressure metal organic chemical vapor deposition to epitaxially grow AlN on silicon.
For additional information, see Karen Heinselman's LinkedIn profile.
Disclaimer: Any opinions expressed on LinkedIn are the author’s own, made in his/her individual capacity, and do not necessarily reflect the views of NREL.
Transparent conductors and wide-bandgap semiconductors
Novel semiconducting materials
Physical and chemical vapor deposition of thin films
Ph.D., Materials Science and Engineering, Cornell University
B.S., General Engineering, Harvey Mudd College
Postdoctoral Researcher, NREL (2017–Present)
Teaching Assistant, Cornell University (2012–2016)
Growth and Characterization of Homoepitaxial b-Ga2O3 Layers, J. Phys. D. (2020)
Review of ZnSnN2 Semiconductor Material, J. Phys. Energy (2020)
Combinatorial Synthesis of Magnesium Tin Nitride Semiconductors, J. Am. Chem. Soc. (2020)
Combinatorial Investigation of Structural and Optical Properties of Cation-Disordered ZnGeN2, J. Mat. Chem. C (2020)
COMBIgor: Data-Analysis Package for Combinatorial Materials Science, ACS Comb. Sci. (2019)
Thin Film Synthesis of Semiconductors in the Mg-Sb-N Materials System, Chem. Mat. (2019)
Hot-Wall Low-Pressure Chemical Vapor Deposition Growth and Characterization of AlN Thin Films, J. Cryst. Growth (2017)