Chun Sheng Jiang

Chun Sheng Jiang

Senior Scientist


Chun-Sheng Jiang is a senior scientist in the Analytical Microscopy and Imaging Science group of the Materials Science Center. His primary field is scanning probe microscopy (SPM) and device physics of photovoltaic and energy storage technologies. He has conducted pioneer nanometer-scale characterization for photovoltaic technology by developing and applying SPM-based nanoelectrical probes of Kelvin probe force microscopy (KPFM), scanning capacitance microscopy (SCM), and scanning spreading resistance microscopy (SSRM). These characterizations involve a wide range of photovoltaic materials and devices including organic-inorganic hybrid perovskite, CdTe, Cu(In,Cu)Se2, crystalline Si, III-V, and amorphous and nanocrystalline Si. He has authored more than 50 publications and coauthored more than 150.

Research Interests

  • Development of novel nanometer-resolution probe techniques for a wide range of renewable energy research.
  • Nanoelectrical characterization and device physics of new emerging and commercialized high-efficiency photovoltaics, and photovoltaic reliability related to material science.
  • Nanometer-scale in-situ and ex-situ characterization of Li-ion and Li-metal batteries, as well as photoelectrochemical water-splitting for hydrogen.


Ph.D. Physics, University of Tokyo, Japan

M.S. Physics, Harbin Institute of Technology, China

B.S. Physics, Dalian University of Science and Technology, China

Featured Work

C.-S. Jiang, M. Yang, Y. Zhou, B. To, S.U. Nanayakkara, J.M. Luther, W. Zhou, J.J. Berry, J. van de Lagemaat, N.P. Padture, K. Zhu, and M.M. Al-Jassim, “Carrier separation and transport in perovskite solar cells studied by nanometer-scale profiling of electrical potential,” Nature Communication 6, 8397 (2015).

J.M. Burst, J.N. Duenow, D.S. Albin, E. Colegrove, M.O. Reese, J.A. Aguiar, C.-S. Jiang, M.K. Patel, M.M. Al-Jassim, D. Kuciauskas, S. Swain, T. Ablekim, K.G. Lynn, and W.K. Metzger, “CdTe solar cell with open-circuit voltage breaking the 1 V barrier,” Nature Energy 1, 16015(2016), DOI: 10.1038/nenergy.2016.15

C.-S. Jiang, M.A. Contreras, L.M. Mansfield, H.R. Moutinho, B. Eggas, K. Ramanathan, and M.M. Al-Jassim, “Nanometer-scale surface potential and resistance mapping of wide-bandgap Cu(In,Ga) Se2 thin films,” Appl. Phys. Lett. 106, 043901 (2015).

C. Xiao, C.-S. Jiang, H.R. Moutinho, D. Levi, Y. Yan, B. Gorman, and M.M. Al-Jassim, “Locating the electrical junction in Cu(In,Ga)Se2 and Cu2ZnSnSe4 solar cells by scanning capacitance spectroscopy,” Progress in Photovoltaics: Research and Applications 23, 33–40 (2016), DOI: 10.1002/pip.2805

C.-S. Jiang, H.R. Moutinho, R.G. Dhere, and M.M. Al-Jassim, “The nanometer-resolution local electrical potential and resistance mapping of CdTe thin films,” IEEE Journal of Photovoltaics 3, 1383 (2013).

C.-S. Jiang, M.A. Contreras, I. Repins, H.R. Moutinho, Y. Yan, M.J. Romero, L.M. Mansfield, R. Noufi, and M.M. Al-Jassim, “How grain boundaries in Cu(In,Ga)Se2 thin films are charged: Revisit,” Appl. Phys. Lett. 101, 033903 (2012).

C.-S. Jiang, Z.G. Li, H.R. Moutinho, L. Liang, A. Ionkin, and M.M. Al-Jassim, “Real-space microscopic electrical imaging of n+-p junction underneath front-side Ag contact of multicrystalline Si solar cells,” J. Appl. Phys. 111, 083704 (2012).

Y. Yan, C.-S. Jiang, R. Noufi, S.-H. Wei, H.R. Moutinho, and M.M. Al-Jassim, “Electrically benign behavior of grain boundaries in polycrystalline CuInSe2 films,” Phys. Rev. Lett. 99, 235504 (2007).

C.-S. Jiang, S.-C. Li, H.-B. Yu, D. Eom, X.-D. Wang, Ph. Ebert, J.-F. Jia, Q.-K. Xue, and C.-K. Shih, “Building Pb nanomesas with atomic-layer precision,” Phys. Rev. Lett. 92, 106104 (2004).