Capacitance techniques monitor the movement of electronic charge within a semiconductor device and provide a measure of free-carrier and electrically active defect-state properties. Capacitance is the charge storage capacity and is measured across a rectifying junction.
Other Measurements pages:
Determines the concentration of majority carriers in the bulk of the device, energy levels of interface states (or both) that often exist between the surfaces of dissimilar materials.
Deep-level Transient Spectroscopy (DLTS)
Examines the time-dependent flow of charge into and out of localized energy states associated with defects in the semiconductor. DLTS can detect trap concentrations as low as 1012 cm-3 and as high as the doping level (constant-capacitance DLTS). It also distinguishes between minority- and majority-traps; determines activation energy and captures cross-section. Our capabilities allow the use of electrical or optical pulses to fill traps and a sample temperature range of ~20 to 475 K. DLTS is a nondestructive complement to secondary-ion mass spectrometry and Auger electron spectroscopy.
Characterizes defect levels by measuring capacitance with varying frequency and temperature.
For additional information contact Dean Levi, 303-384-6605.