Shahadat Sohel

Shahadat Sohel

Postdoctoral Researcher-Materials Science


Orcid ID https://orcid.org/0000-0001-9389-6982
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Shahadat Sohel joined NREL in 2020 as a postdoctoral researcher in the Material Sciences Center. His current research focuses on developing electronic devices and sensors based on wide bandgap semiconductors applicable for harsh operating conditions such as high temperature and mechanical stress.

He received his bachelor's and master's degrees in electrical and electronic engineering from Bangladesh University of Engineering and Technology  in 2012 and 2015, respectively. He then received his doctorate in electrical and computer engineering from The Ohio State University in 2020. While pursuing his doctorate, he worked on developing high frequency, RF power amplifiers for high-linearity applications based on III-Nitride materials.

For additional information, see Shahadat Sohel's LinkedIn profile.

Disclaimer: Any opinions expressed on LinkedIn are the author’s own, made in the author's individual capacity, and do not necessarily reflect the views of NREL.

Research Interests

Wide bandgap semiconductors for RF and power applications

Epitaxial growth of nitride and oxide materials

Semiconductor device physics

Education

Ph.D., Electrical & Computer Engineering, The Ohio State University

M.S., Electrical & Electronic Engineering, Bangladesh University of Engineering and Technology

B.S., Electrical & Electronic Engineering, Bangladesh University of Engineering and Technology

Featured Work

Improved DC-RF Dispersion with Epitaxial Passivation for High Linearity Graded AlGaN Channel Field Effect Transistors, Applied Physics Express (2020)

Linearity Improvement with AlGaN Polarization-Graded Field Effect Transistors with Low Pressure Chemical Vapor Deposition Grown SiNx Passivation, IEEE Electron Device Letters (2020)

Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications, IEEE Electron Device Letters (2019)

X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors, IEEE Electron Device Letters (2018)

Awards and Honors

Presidential Fellowship – The Ohio State University (2020)