Elisabeth McClure is a postdoctoral researcher in the high efficiency crystalline photovoltaics group at NREL. Her research addresses the high cost associated with III-V photovoltaics by working with the high-throughput (>528 microns/hour) and potentially low-cost dynamic hydride vapor phase epitaxy reactor.
She received her doctorate in microsystems engineering from Rochester Institute of Technology in 2019 and her bachelor's degree in physics from Emory University in 2014. Her doctoral research focused primarily on developing low-cost substrates for high-efficiency III-V photovoltaics using a metal-catalyzed crystallization technique.
For additional information, see Elisabeth McClure's LinkedIn profile.
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High-efficiency, low-cost photovoltaics
Energy policy and decision science
Materials characterization and microscopy
Ph.D. Microsystems Engineering, Rochester Institute of Technology
B.S. Physics, Emory University
GaAs Growth Rates of 528 μm/h Using Dynamic-Hydride Vapor Phase Epitaxy with a Nitrogen Carrier Gas, Applied Physics Letters (2020)
The Effects of Silicon Substrate Thickness and Annealing Temperature on Surface Coverage for Aluminum-Induced Crystallization of Germanium Films, Materials Science in Semiconductor Processing (2019)