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Photo of Jonh Simon.

John Simon

Scientist

John.Simon@nrel.gov | 303-275-3898

Dr. Simon received his doctorate in electrical engineering from the University of Notre Dame, in Indiana, in 2009 where he studied novel approaches to utilize the polarization fields in III-V Nitride semiconductors for improved electronic device performance. He then had a postdoctoral appointment at Yale University where he studied metamorphic buffers for high-efficiency III-V solar cells.

In 2011 Dr. Simon joined NREL to study novel crystalline substrates for growth of III-V Nitride semiconductors for solid-state lighting applications. Since then he has been involved in various projects involving the growth of III-V semiconductor films and devices for solar applications. Specific research interests include development of low-cost III-V solar cells, high-efficiency multi-junction solar cells, III-V semiconductor epitaxy, and development of novel semiconductor devices.

Featured Publications

Simon, J.; Tomasulo, S.; Simmonds, P.J.; Romero, M.; and Lee, M.J. "Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells." J. Appl. Phys. 109(1), 013708 (2011)

Simon, J; Protasenko, V.; Lian, C.; Xing, H.; and Jena, D. "Polarization-induced Hole Doping in Wide-Bandgap Semiconductor Heterostructures." Science, 327(5961), 60 (2010)

Simon, J.; Zhang, Z.; Goodman, K.; Xing, H.; Kosel, T.; Fay, P.; and Jena, D. "Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures." Phys. Rev. Lett. 103(2), 026801, (2009).

View all NREL publications for John Simon.