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Pauls Stradins

Senior Scientist II
On staff since: 2002

Phone number: 303-384-6774
Email Pauls Stradins

Primary Research Interests

  • Light-induced structural changes and other metastable phenomena and electronic transport in disordered materials (such as a-Si:H)
  • Crystallization of a-Si and related structural changes: in-situ monitoring, mechanisms of nucleation, grain growth, and epitaxy on native or foreign templates for next generation photovoltaics
  • Non-linear electrical transport and breakdown phenomena in disordered Si and organic semiconductors for memory and photovoltaic applications

Other Affiliations

  • Materials Research Society, Member
  • American Physical Society, Member

Prior Work Experience

My past research has been in solid-state physics. I have worked on the electronic, optical, and structural properties of disordered materials:

  • 5 years as a Visiting Scholar and Research Associate at the University of Chicago
  • 5 years as a research scientist at the Electrotechnical Laboratory (ETL) in Japan (now the National Institute of Advanced Industrial Science and Technology, AIST)

Education and Background Training

  • Ph.D. in Physics/Solid-State Physics from the Institute of Physics, Latvian Academy of Sciences
  • M.S. in Physics/Solid-State Physics from the Institute of Solid State Physics of USSR Academy of Sciences, and Moscow Institute of Physics and Technology

Hobbies and Other Interests

  • Aquariums
  • Hiking in the mountains
  • Yoga

Selected Publications

Stradins, P.; Fritzsche, H. "Photoinduced Creation of Metastable Defects in a-Si-H at Low-Temperatures and Their Effect on the Photoconductivity." Philos. Mag. B; Vol. 69, 1994; p. 121.

Stradins, P; Fritzsche, H.; Tran, M.Q. "Light Induced Defects in a-Si:H, Temperature Dependence of their Creation and Anneal and their Effect on Photocarrier Lifetime." Mat. Res. Soc. Symp. Proc.; Vol. 336, 1994; p. 227 (invited talk).

Stradins, P.; Fritzsche, H."Light-Induced Metastable Changes in Defect Density and Photoconductivity of a-Si:H Between 4.2 and 300 K." J. Non-Cryst. Solids; Vol. 200, 1996; p. 432.

Stradins, P.; Kondo, M.; Matsuda, A. "A Study of the Time Scales of Processes Responsible for the Light Induced Degradation of a-Si:H by Pulse Illumination." Mat. Res. Soc. Proc.; Vol. 609, 2000; p. A3.1 (invited talk).

Stradins, P.; Shimizu, S.; Kondo, M.; Matsuda, A. "Less-Understood Phenomena in the Light-Induced Degradation and Photocarrier Capture in a-Si:H." J. Non-Cryst. Solids; Vol. 299, 2002; p. 460.

Stradins, P.; "Light-Induced Degradation in a-Si:H and its Relation to Defect Creation." Solar Energy Mat. and Solar Cells; in press.

Stradins, P.; "Light-induced degradation in a-Si:H and its relation to defect creation", Solar Energy Materials & Solar Cells 78 (2003) 349-367.

Stradins, P.; Kondo, M. "Staebler - Wronski Effect - Physics and Relevance to Devices", In book: "Photo-induced metastability in amorphous semiconductors and related phenomena" (Wiley - VCH, 2003); p. 220 - 240.

Stradins, P.; Branz, H. M.; Jackson, W. B.; Crandall, R. S.; Hu, J.; Wang, Q. "Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon", Mat. Res. Soc. Symp. Proc.; Vol. 808, 2004; p. 465.

Whitaker, J.; Viner, J.; Zukotynski, S.; Johnson, E.; Taylor, P.C.; Stradins, P. "Tritium Induced Defects in Amorphous Silicon", Mat. Res. Soc. Symp. Proc.; Vol. 808, 2004; p.159.

View a complete list of my NREL publications.

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