Principal Scientist
On staff since: 1987
Phone number: 303-384-6694
Email Howard Branz
Primary Research Interests
- Film crystal silicon photovoltaics
- Defects, metastability, and diffusion in semiconductors
- Physics of photovoltaic, switching, and electrochromic devices
- Mechanisms of film and epitaxial silicon growth
- Electrically driven DNA microarrays
Other Affiliations
- Materials Research Society (MRS)
- American Physical Society
- Session Organizer, 16th American Conference on Crystal Growth and Epitaxy (ACCGE-16)
- Co-Chair, 22nd International Conference on Amorphous and Nanocrystalline Semiconductors, 2007 (ICANS22)
Education
- Ph.D. (1987) in Condensed-Matter Physics from the Massachusetts Institute of Technology (MIT). Ph.D. thesis completed under the direction of David Adler and John Haggerty on hydrogenated amorphous silicon (a-Si:H) growth, transport physics, and devices
- B.A. in physics from Brandeis University
Hobbies and Other Interests
- Enjoying my twin daughters, Mikayla and Ariel
- Foreign languages
- Jazz and classical flute
- Mushroom hunting and identification
- Backpacking, running, and yoga
Selected Publications
Branz, H.M. "The Hydrogen Collision Model: Quantitative Description of Metastability in Amorphous Silicon." Phys. Rev. B; Vol. 59, 1999; pp. 5498-5512.
Teplin, C.W.; Jiang, C.S.; Stradins, P.; Branz, H.M. (2008). Cone Kinetics Model for Two-Phase Film Silicon Deposition. Appl. Phys. Lett.; Vol. 92, pp. 93114-6.
Q. Wang, C. Teplin, P. Stradins, B. To, K.M. Jones, and H.M. Branz, "Significant improvement in silicon chemical vapor deposition epitaxy above the surface dehydrogenation temperature," J. Appl. Phys., vol. 100, 93520, 2006.
Du, M.-H.; Branz, H.M.; Crandall, R.S.; Zhang, S.B. "Self-trapping enhanced carrier recombination at light-induced boron-oxygen complexes in silicon" Phys. Rev. Lett., Vol. 97, 2006, pp. 256602-5.
Zhang, S.B.; Branz, H.M. "Hydrogen Above Saturation at Silicon Vacancies: H-Pair Reservoirs and Metastability Sites." Phys. Rev. Lett.; Vol. 87, 2001; pp. 105503-105506.
Yelon, A.; Movaghar, B.; Branz, H.M. "Origin and Consequences of the Compensation (Meyer-Neldel) Law." Phys. Rev. B; Vol. 46, 1992; pp. 12244-12250.
Branz, H. M.; Silver, M. "Potential Fluctuations due to Inhomogeneity in Hydrogenated Amorphous Silicon and the Resulting Charged Dangling-Bond Defects." Phys. Rev. B; Vol. 42, 1990; pp. 7420-7428.
View a complete list of my NREL publications. |
