Optical Processing Furnace
This page provides details on the optical processing furnace in the Stand-Alone Measurements and Characterization bays of the Process Development and Integration Laboratory. This capability—also called the Optical Thermal Annealing Station—should be operational within 2009.
The optical processing furnace is available for any application requiring annealing, and it can be used with a wide range of samples, including amorphous and crystalline silicon and cadmium telluride.
- Doing hydrogen passivation
- Recrystallizing thin-film silicon
- Preparing a wafer surface by oxidation
- Manufactured by Applied Optical Sciences
- Access to four process gases: Ar, N2, O2, and forming gas (N2+H2)
- Atmospheric pressure
- Can exhaust effluents
- Substrate temperature up to 900°C with uniformity ±5°C, monitored with a thermocouple
Contact Bhushan Sopori for more details.