Our Surface Analysis team uses techniques to determine the chemical, elemental, and molecular composition, and electronic structure of material surfaces and interfaces. This research is important because the properties of the surface and outer few micrometers of a material often control the electrical, chemical, or mechanical properties of that material.
Using ions, electrons, and X-ray or ultraviolet photons in high vacuum, we probe surfaces and interfaces of a material and perform the following functions:
- Map the elemental and chemical composition of specimens
- Study impurities and grain boundaries
- Gather bonding and chemical-state information
- Measure surface electronic properties
- Perform depth profiles to determine doping and elemental distributions
- Analyze a wide range of materials, including photovoltaics, microelectronics, polymers, and biological specimens.
Our Surface Analysis group wants to work collaboratively with you to solve materials- and device-related research and development (R&D) problems.
The following table provides a condensed listing of instumentation, applications, properties, and specifications for each surface analysis analytical technique.
Major Instrumentation for Surface Analysis
|Probing species||Spot Size||Signal||Elements||Limit||Lateral Reso-
|Auger electron spectroscopy||Physical
Electronics PHI 670
|Elemental surface analysis, small-feature analysis||Electrons||25 nm||Auger electrons||Li to U||0.5-1 at.%||25 nm||Yes, 10 nm||Yes||—|
|X-ray and ultraviolet photoelectron spectroscopy||Physical
Electronics PHI 5600
|Elemental and chemical surface analysis, surface electronic properties||X-ray or ultra-violet photons||50 µm (XPS)
1 mm (UPS)
|Photo-emitted electrons||Li to U||0.5-1 at.% (XPS)||50 µm (XPS)||Yes, limited, 100 nm both||Limited||Yes|
|Surface Analysis Cluster Tool Integrated Capabilities||PHI670, PHI5600, UHV Deposition system with TDMS, inert-atmosphere glovebox; in-situ materials chemistry and processing studies||Elemental surface analysis, small feature analysis, elemental and chemical surface analysis, surface electronic properties||N/A||N/A||N/A||N/A||N/A||N/A||N/A||N/A||N/A|
|Dynamic SIMS||Cameca IMS- 5F & IMS-3F||Trace-element contaminant and dopant analysis||Ions (Cs, O, Ar)||1 to 200 µm||Ions (+/-)||H to U and all isotopes||ppm-ppb
|1 µm||Yes, <10 nm||Yes||—|
|Static TOF SIMS||IONTOF TOF SIMS IV||Surface elemental and molecular information||Ions (Ga, Ar, O)||To 0.3 µm||Ions (+/-)||mass range <1000 amu||ppm-ppb (cm-2)||0.5 µm||Yes, <5 nm||Yes||Yes|
For additional information see the Surface Analysis brochure.
For additional information contact Glenn Teeter, 303-384-6664.