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Photovoltaic Research Measurements & Characterization Measurements and Characterization Home About Measurements & Characterization Analytical Microscopy Scanning Electron Microscopy Basic Operating Mode Electron-Beam-Induced Current Cathodoluminescence Backscattered Diffraction Scanning Probe Platform Transmission/Scanning Transmission Electron Microscopy Scanning Probe Microscopy Dual-Beam Sample Preparation Electron Probe Microanalysis Device Performance Measurement Electro-Optical Characterization Surface Analysis Research Staff Working with Us

Basic Operating Mode

Pair of energy dispersive microscopy images of a copper indium diselenide thin film, showing elemental maps of copper (left) and indium (right).

CuInSe2 thin film. Cu and In elemental maps obtained by EDS.

In its basic operating mode, scanning electron microscopy senses secondary electrons and X-rays emitted from the sample. The former provides very high-resolution topography, and the latter indicates elemental composition.

Secondary electrons, with energies in the range of 0 to 50 eV, provide an excellent topographic image of the surface under observation with very high resolution and depth of field at very high scanning speeds.

Backscattered electron emission is sensitive to composition. Energy transfer from incident electrons to the specimen produces X-rays characteristic of the specimen's elemental composition by energy-dispersive spectroscopy (EDS). Elements are identified on the energy-resolved spectrum of X-rays by their characteristic lines. Synchronizing the scanning of the electron beam with the readout of the EDS detector can generate elemental maps with micrometric resolution. Under well-controlled conditions, the composition of the specimen can be quantified with an accuracy of 1%-3%.

For further information, contact Manuel Romero, 303-384-6653.