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Xiuwen Zhang

Subcontractor

Photo of Xiuwen Zhang
Phone: 
(303) 384-6442
At NREL Since: 
2008

Dr. Zhang joined NREL in March 2008 as a postdoctoral researcher in the Solid State Theory Team. He received his B.E. in Electrical Engineering from Tsinghua University, China, and, in 2008, was granted his Ph.D. in physics from the Institute of Semiconductors in Chinese Academy of Science, Beijing, China, under the supervision of Prof. Jian-Bai Xia. His research subject was the electrical and magnetic properties of semiconductor quantum dots and wires. During his doctoral study, Xiuwen gained experience as a project officer in the School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore. Dr. Zhang currently concentrates his research in searching the lowest-energy crystal structure and studying the physical properties of new inorganic bulk materials, using the first-principles method.

Research Interests 

  • High-throughput search for new solar-energy conversion materials
  • Electronic and doping properties of the new materials
  • Genetic Algorithm based crystal-structure search

Selected Publications 

  1. Zhang, X.; Zunger, A. (2010). "Altered reactivity and the emergence of ionic metal ordered structures in Li-Cs at high pressures." Physical Review Letters (104); p. 245501.
  2. Zhang, X.; Trimarchi, G.; ďAvezac, M.; Zunger, A. (2009). "Long-range order instead of phase separation in large lattice-mismatch isovalent AX-BX systems." Physical Review B. (80); p. 241202(R).
  3. Zhang, X.; Fan, W. J.; Li, S. S.; Xia, J.-B. (2007). "Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1-xNx nanowires: Ten-band k·p model." Physical Review B. (75); p. 205331.
  4. Zhang, X.; Li, S. S.; Xia, J. B. (2006). "Semiconductor-metal transition in InSb nano wires and nanofilms under external electric field." Applied Physics Letters (89); p. 172113.