Dr. Zhu joined NREL in Sep. 2009 as a postdoctoral researcher in the Computational Materials Science Team. He received his B.A. in physics from the Beijing University, China, and gained his Ph.D. in materials science and engineering in 2009 at University of Utah, under the supervision of Prof. Feng Liu and Prof. G. B. Stringfellow. He is experienced in modeling and simulating of surface related problems, strain and stress effects, and doping in semiconductor materials.
- Doping properties in semiconductors and insulators
- Stress induced effects
- Thermal energy storage materials
- Zhu, J.; Wei, S.-H. (2011). "Tuning doping site and type by strain: Enhanced p-type doping in Li doped ZnO." Solid State Communication (151); p. 1437.
- Zhu, J.; Liu, F.; Stringfellow, G. B.; Wei, S.-H. (2010). "Strain-Enhanced Doping in Semiconductors: Effects of Dopant Size and Charge State." Phys. Rev. Lett. (105); p. 195503.
- Zhu, J.; Liu, F.; Stringfellow, G. B. (2009). "Dual-Surfactant effect on enhancing different p-type doping in GaP." J. of Crystal Growth (312); p. 174.
- Zhu, J.; Liu, F.; Stringfellow, G. B. (2008). "Dual-Surfactant Effect to Enhance p-Type Doping in III-V Semiconductor Thin Films." Phys. Rev. Lett. (101); p. 196103.
- Han, Y.; Zhu, J.; Liu, F.; Li, S.-C.; Jia, J.-F.; Zhang, Y.-F.; Xue, Q.-K. (2004). "Coulomb Sink: A Novel Coulomb Effect on Coarsening of Metal Nanoclusters on Semiconductor Surfaces." Phys. Rev. Lett. (93); p. 106102.