Dr. Deng received his Ph.D. degree in physics from the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, in 2010. Hui-Xiong joined the Computational Materials Science Team at NREL in 2011. His primary interest is now focused on using the first-principles simulations to understand the electronic properties of semiconductors, transparent conducting oxides, and nanostructures.
- Electronic structures of semiconductors and transparent conducting oxides
- Magnetic properties of semiconductors
- Electronic structures and doping properties of nano materials
- Simulation of nano-sized semiconductor devices
- Deng, H.-X.; Li, J.; Li, S.-S.; Xia, J.-B. (2010). "Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs." Phys. Rev. B. (82); p. 193204.
- Deng, H.-X.; Li, J.; Li, S.-S.; Xia, J.-B.; Walsh, A.; Wei, S.-H. (2010). "Origin of antiferromagnetism in CoO: A density functional theory study." Appl. Phys. Lett. (96); p. 162508.
- Deng, H.-X.; Li, S.-S.; Li, J. (2010). "Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots." J. Phys. Chem. C. (114); p. 4841.
- Deng, H.-X.; Jiang, X.-W.; Luo, J.-W.; Li, S.-S.; Xia, J.-B.; Wang, L.-W. (2008). "Multiple valley couplings in nanometer Si metal–oxide–semiconductor field-effect transistors." J. Appl. Phys. (103); p. 124507.