Dr. Huang joined the Computational Materials Science Team at NREL in 2010. He received his Ph.D. in physics from Tsinghua University, Beijing, China, in 2010 under the supervision of Prof. Wenhui Duan. His background is in solid-state physics and materials science based on first-principles electronic and transport calculations. Until now, he has published 20-plus peer-reviewed papers with a total citation of approximately 350 times.
- Low dimensional systems, such as nanotubes, nanowires and graphene.
- Physical and chemical properties of surfaces, interfaces and superlattices.
- Mechanical properties and stabilities of low dimensional systems.
- Hydrogen storage materials and solar cell materials.
- Huang, B.; Xiang, H. J.; Wei, S.-H. (2011). "Overcoming Doping Difficulty in Graphene via Substrate: a First-principles Calculation." Phys. Rev. B Rapid Communications (83); p. 161405(R).
- Huang, B.; Son, Y.-W.; Kim, G.; Duan, W.; Ihm, J. (2009). "Electronic and Magnetic Properties of Partially open Carbon Nanotubes." J. Am. Chem. Soc. (131); p. 17919.
- Huang, B.; Liu, M.; Su, N.; Wu, J.; Duan, W.; Gu, B.-L.; Liu, F. (2009). "Quantum Manifestations of Graphene Edge Stress and Edge Instability: A First-Principle Study." Phys. Rev. Lett. (102); p. 166404.
- Huang, B.; Liu, F.; Wu, J.; Gu, B.-L.; Duan, W. (2008). "Suppression of Spin Polarization in Graphene Nanoribbons by Edge Defects and Impurities." Phys. Rev. B. (77); p. 153411.
- Yan, Q.; Huang, B.; Yu, J.; Zheng, F.; Zang, J.; Wu, J.; Gu, B.-L.; Liu, F.; Duan, W. (2007). "Intrinsic Current-Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping." Nano Lett. (7); p. 1469-1473.