Dr. Gustavo Martini Dalpian received a B. S. in Physics in 1997 from the Federal University of Santa Maria, Brazil; a M. Sc. in Physics in 2000 and a Ph.D. in Physics in 2003 from the Physics Institute of the University of Sao Paulo, Brazil, under supervision of Prof. Adalberto Fazzio. During his Ph.D. he used ab initio methods, based on Density Functional Theory, to systematically investigate problems of interest for semiconductor physics: the SiGe alloy and the nature of defects in it; the interaction of Ge monomers and dimers on the bare and vicinal Si(100) surface; the behavior of Mn impurities in bulk Si and on the Si(100) surface was also studied in order to predict the possibility of a MnSi diluted magnetic semiconductor.

His current research interests are:

1. Diluted Magnetic Semiconductors (DMS);
2. Impurities in bulk semiconductors;
3. Impurities on the surface/interface of semiconductors;
4. Organic semiconductors.

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