Dr. David Segev is currently working at the University of California, Santa Barbara. He received a Ph.D. in Physics in 2000 from the Israeli Institute of Technology (Technion) of Haifa, Israel. Under the supervision of Prof. R. Kalish and Dr. J. Adler he studied defects and doping in diamond. First-principles pseudopotential, semi-empirical (tight binding) and classical models have been used in his calculations. He worked two years in the Material Research Department of the Trellis-Photonics company (Jerusalem), which developed an all-optical switching device based on electro-holography. He used first-principles quantum models to study the structural and the electrical characteristics of defects and dopants in K_xLi_1-xTa_yNb_1-yO₃ (KLTN) ferroelectrics and photo-refractive crystals. The GW approximation was used for more accurate calculations of the crystal band structure and compositional disorder in KLTN ferroelectrics has been investigated with a virtual crystal approach.

His current research interests are:

1. Band offset of semiconductors;
2. Doping in wide band gap semiconductors;
3. Transition metal doping in oxides;
4. Properties of dilute magnetic semiconductors.

View publications