Anderson Janotti is currently working with the University of California, Santa Barbara. He received a B.S. in Physics in 1994 and a Ph.D. in Physics in 1999,from the University of Sao Paulo, SP, Brazil. His Ph.D. thesis, under the guidance of Prof. Adalberto Fazzio, is on the Electronic and Structural Properties of Defects in Semiconductors. He studied intrinsic defect complexes and defect recombinations in GaAs, point defects in Ge, and Ge dimers adsorbed on Si surfaces, using the first-principles pseudopotential method. He also developed a kinectic Monte Carlo code to study diffusion of impurities in crystaline Si. His current research interests are:

1. Electronic structure of nitride alloys (e.g., GaAsNBi);
2. Defect physics of ternary chalcopyrite materials (e.g., ZnGeAs₂);
3. CuAu x Chacopyrite phase stability in AgGaS₂ and AgGaSe₂;
4. Hydrogen related defects in nitride alloys (GaAsN, GaPN).

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