Stephan Lany - Postdoc

phone: 303-384-6652
email: Stephan.Lany@nrel.gov
At NREL since 2003

Research Interests

Electronic structure calculations and computational materials science
Computational design of photovoltaic materials properties
Metastable defects in Cu(In,Ga)Se₂ -based solar cells and in II‑VI semiconductors
Magnetic defects in semiconductors and insulators.

2002	Ph.D., summa cum laude, Universität des Saarlandes, Germany
1998	M.S. in Physics ("Diplom"), Universität des Saarlandes, Germany

2003–present	Postdoctoral researcher with Solid State Theory Group at NREL
1997–2003	Research and teaching assistant, Universität des Saarlandes, Germany

S. Lany and A. Zunger, " Anion vacancies as a source of persistent photoconductivity in II‑VI and chalcopyrite semiconductors," Phys. Rev. B 72, 035215 (2005).
S. Lany, Y.J. Zhao, C. Persson, and A. Zunger, " Halogen n-type doping of chalcopyrite semiconductors," Appl. Phys. Lett. 86, 042109 (2005).
S. Lany and A. Zunger, "Metal-dimer atomic reconstruction leading to deep donor states of the anion vacancy in II‑VI and chalcopyrite semiconductors," Phys. Rev. Lett. 93, 156404 (2004).
S. Lany, H. Wolf, and Th. Wichert, "Density functional theory calculations establish the experimental evidence of the DX center atomic structure in CdTe," Phys. Rev. Lett. 92, 225504 (2004).
S. Lany, P. Blaha, J. Hamann, V. Ostheimer, H. Wolf, and Th. Wichert, "Group V acceptors in CdTe: Ab initio calculation of lattice relaxation and the electric field gradient," Phys. Rev. B 62, R2259 (2000).

View NREL publications for this staff member.